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| www.fairchildsemi.com KA1L0880B/KA1M0880B Fairchild Power Switch(FPS) Features * * * * * * * * * * Precision fixed operating frequency KA1L0880B(50KHz),KA1M0880B(67KHz) Pulse by pulse over current limiting Over load protection Over voltage protection (Min. 23V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Latch up mode Soft start Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-3P-5L 1 1. DRAIN 2. GND 3. VCC 4. FB 5. S/S Internal Block Diagram #3 VCC 32V 5V Vref Good logic #5 Soft Start 5V OSC S R #4 FB 5A 1mA 2.5R 1R 9V + 7.5V - + 25V - Thermal S/D OVER VOLTAGE S/D - + L.E.B 0.1V S R Q #2 GND Q Internal bias #1 DRAIN SFET Power on reset Rev.1.0.2 (c)2001 Fairchild Semiconductor Corporation KA1L0880B/KA1M0880B Absolute Maximum Ratings Parameter Maximum Drain voltage (1) Symbol VD,Max VDGR VGS IDM (3) Value 800 800 30 32.0 810 15 8.0 5.6 30 -0.3 to VSD 190 1.54 -25 to +85 -55 to +150 Unit V V V ADC mJ A ADC ADC V V W W/C C C Drain-Gate voltage (RGS=1M) Gate-source (GND) voltage Drain current pulsed Avalanche current (4) (2) Single pulsed avalanche energy EAS IAS ID ID VCC,MAX VFB PD Derating TA TSTG Continuous drain current (TC=25C) Continuous drain current (TC=100C) Maximum Supply voltage Input voltage range Total power dissipation Operating ambient temperature Storage temperature Notes: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, VDD=50V, RG=25, starting Tj=25C 4. L=13H, starting Tj=25C 2 KA1L0880B/KA1M0880B Electrical Characteristics (SFET part) (Ta=25C unless otherwise specified) Parameter Drain source breakdown voltage Symbol BVDSS Condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=5.0A VDS=15V, ID=5.0A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=8.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=8.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) Min. 800 1.5 Typ. 1.2 2.5 2460 210 64 95 150 60 20 70 Max. 50 200 1.5 90 200 450 150 150 nC nS pF Unit V A A S Zero gate voltage drain current Static drain source on resistance (note) Forward transconductance (note) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate source charge Gate drain (Miller) charge Note: Pulse test: Pulse width 300S, duty cycle 2% 1 S = --R IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 3 KA1L0880B/KA1M0880B Electrical Characteristics (CONTROL part) (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start threshold voltage Stop threshold voltage OSCILLATOR SECTION Initial accuracy Frequency change with temperature (2) Maximum duty cycle FEEDBACK SECTION Feedback source current Shutdown Feedback voltage Shutdown delay current SOFT START SECTION Soft Start Voltage Soft Start Current REFERENCE SECTION Output voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Thermal shutdown temperature (Tj) (1) Over voltage protection voltage TOTAL DEVICE SECTION Start Up current Operating supply current (control part only) VCC zener voltage ISTART IOP VZ VCC=14V Ta=25C ICC=20mA 0.1 6 30 0.3 12 32.5 0.45 18 35 mA mA V TSD VOVP 140 23 160 25 28 C V (1)(2) Symbol VSTART VSTOP Condition After turn on KA1L0880B KA1M0880B -25C Ta +85C Min. 14 9 45 61 74 Typ. 15 10 50 67 5 77 0.9 7.5 5.0 5.0 1.0 5.00 0.3 5.00 Max. 16 11 55 73 10 80 1.1 8.1 6.0 5.3 1.2 5.20 0.6 5.60 Unit V V FOSC F/T Dmax IFB VSD Idelay VSS ISS Vref Vref/T IOVER kHz % % mA V A V mA V mV/C A Ta=25C, 0V Vfb 3V Ta=25C, 5V Vfb VSD VFB =2V Sync & S/S=GND Ta=25C -25C Ta +85C Max. inductor current 0.7 6.9 4.0 4.7 0.8 4.80 4.40 CURRENT LIMIT (SELF-PROTECTION) SECTION Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 KA1L0880B/KA1M0880B Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 Fig.2 Feedback Source Current 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 1. Operating Frequency Figure 2. Feedback Source Current Fig.3 Operating Current 1.2 1.15 1.1 1.05 IOP 1 Iop 0.95 0.9 0.85 0.8 -25 1.1 1.05 Fig.4 Max Inductor Current IIpeak 1 over 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 3. Operating Supply Current Figure 4. Peak Current Limit 1.5 1.3 Fig.5 Start up Current 1.15 1.1 1.05 Vth(H) Vstart 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 Fig.6 Start Threshold Voltage IIstart1.1 ST 0.9 0.7 0.5 -25 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 5. Start up Current Figure 6. Start Threshold Voltage 5 KA1L0880B/KA1M0880B Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) Fig.7 Stop Threshold Voltage 1.15 1.1 1.05 1.15 1.1 1.05 Fig.8 Maximum Duty Cycle Vth(L) Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.10 Shutdown Feedback Voltage Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.12 Over Voltage Protection Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 6 KA1L0880B/KA1M0880B Typical Performance Characteristics (Continued) (These characteristic grahps are normalized at Ta=25C) Fig.13 Soft Start Voltage 1.15 1.1 1.05 2.5 2 1.5 ( )1 Rdson 0.5 0 25 50 75 100 125 150 Fig.14 Drain Source Turn-on Resistance Vss 1 0.95 0.9 0.85 -25 0 -25 0 25 50 75 100 125 150 Temperature [C] Temperature [C] Figure 13. Soft Start Voltage Figure 14. Static Drain Source on Resistance 7 KA1L0880B/KA1M0880B Package Dimensions TO-3P-5L 8 KA1L0880B/KA1M0880B Package Dimensions TO-3P-5L (Forming) 9 KA1L0880B/KA1M0880B Ordering Information Product Number KA1L0880B-TU KA1L0880B-YDTU KA1M0880B-TU KA1M0880B-YDTU TU : Non Forming Type YDTU : Forming type Package TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Rating 800V, 8A 800V, 8A Fosc 50kHz 67kHz DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 10/17/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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